MVTU19

The MVTU19 low-noise high-frequency transistor amplifier unit is designed to replace the morally and technically obsolete high-frequency tube amplifiers ESU-5, ESU-8.

The unit has a built-in protective device for protection against synchronous and asynchronous impulse noise, which operates in the limiting mode both from the start pulse or BLANK, and in the self-limiting mode.

The unit has a built-in temporary gain control (TDC) to suppress interference from reflective local objects.

Application of MVTU19 provides:

performance restoration and extension of lifecycle of receiving devices;
increase in service life of the receive path;
energy usage reduction;
simplification of product operation;
reduction of operating costs.

The module has good maintainability without deterioration of electrical parameters and low repair cost as opposed to traveling wave tubes.

Comparative characteristics of MVTU19 and TWT

Parameters	MVTU19	ESU-5
Operating frequency range, GHz Max. current consumption, mА Max. pulse input power, kW Max. output power (with compression -1 dB), MW Amplification factor, dB Noise ratio, dB Supply voltage, V Overall dimensions, mm Weight, kg	0,8-1,3 100 10 20 30±2 <2 +27±5 172х86х66 0,95	0,86-1,28 - - - 20-30 >6 +400, +1000, +6,3 - 1,8

Scope of supply

Module of MVTU19 low-noise high-frequency transistor amplifier
Data sheet
Power cable

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