MVTU07.М1

The MVTU07.M1 low-noise high-frequency transistor amplifier unit is designed to replace the morally and technically obsolete UT-7 high-frequency amplifiers in the 5N66M radar (S-300 air defense missile system).

The unit has a built-in surge suppression device operating in a self-limiting mode.

Application of MVTU07.M1 provides:

The module has good maintainability without deterioration of electrical parameters and low repair cost as opposed to traveling wave tubes.

Comparative characteristics of MVTU07.M1 and TWT

Parameters
MVTU07.M1 UT-7 high-frequency
amplifiers
Operating frequency range, GHz
Max. current consumption, mА
Max. pulse input power, kW
Max. output power
(with compression - 1 dB), MW
Amplification factor, dB
Noise ratio, dB
Supply voltage, V
Overall dimensions, mm
Weight, kg
7,0-8,33
250
1

20
30±1,5
<5
-12,6±4
 200х114х44 
0,9
7,5-8,33
-
-

-
20-30
>7
+200, +125
-
0,96


Scope of supply


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