
The MVTU07.M1 low-noise high-frequency transistor amplifier unit is designed to replace the morally and technically obsolete UT-7 high-frequency amplifiers.
The unit has a built-in surge suppression device operating in a self-limiting mode.
Application of MVTU07.M1 provides:
-
performance restoration and extension of life cycle of receiving devices;
-
increase in service life of the receive path;
-
energy usage reduction;
-
simplification of product operation;
-
reduction of operating costs.
The module has good maintainability without deterioration of electrical parameters and low repair cost as opposed to traveling wave tubes.
Comparative characteristics of MVTU07.M1 and TWT
Parameters
|
MVTU07.M1
|
UT-7 high-frequency
amplifiers
|
Operating frequency range, GHz
Max. current consumption, mА
Max. pulse input power, kW
Max. output power
(with compression - 1 dB), MW
Amplification factor, dB
Noise ratio, dB
Supply voltage, V
Overall dimensions, mm
Weight, kg
|
7,0-8,33
250
1
20
30±1,5
<5
-12,6±4
200х114х44
0,9
|
7,5-8,33
-
-
-
20-30
>7
+200, +125
-
0,96
|
|
|
Scope of supply
- Module of MVTU07.M1 low-noise high-frequency transistor amplifier
- Data sheet
- Power cable
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