The MVTU19 low-noise high-frequency transistor amplifier unit is designed to replace the morally and technically obsolete high-frequency tube amplifiers ESU-5, ESU-8.
The unit has a built-in protective device for protection against synchronous and asynchronous impulse noise, which operates in the limiting mode both from the start pulse or BLANK, and in the self-limiting mode.
The unit has a built-in temporary gain control (TDC) to suppress interference from reflective local objects.
Application of MVTU19 provides:
- performance restoration and extension of life cycle of receiving devices;
- increase in service life of the receive path;
- energy usage reduction;
- simplification of product operation;
- reduction of operating costs.
The module has good maintainability without deterioration of electrical parameters and low repair cost as opposed to traveling wave tubes.
Scope of supply:
- Module of MVTU19 low-noise high-frequency transistor amplifier
- Data sheet
- Power cable
Характеристики и параметры
| Parameters | MVTU19 | ESU-5 |
|---|---|---|
| Operating frequency range, GHz Max. current consumption, mА Max. pulse input power, kW Max. output power (with compression -1 dB), MW Amplification factor, dB Noise ratio, dB Supply voltage, V Overall dimensions, mm Weight, kg |
0,8-1,3 100 1020 30±1 <2 +27±5 172х86х66 0,95 |
0,86-1,28 – — 20-30 >6 +400, +1000, +6,3 – 1,8 |
